Samsung Unveils zHBM: Memory Above the AI Accelerator

At FMS 2026, Samsung presented zHBM 3D memory concept models, where HBM is placed vertically directly above the AI accelerator, and zNAND-O — NAND flash with an HBM-like structure for on-device AI.

Compiled by Sergey KostenchukPublished 2026-09-07Updated 2026-09-18

2026-09-07 Coding

💻 Samsung Unveils zHBM: Memory Above the AI Accelerator

At FMS 2026, Samsung presented 3D memory concepts: zHBM — HBM vertically above the AI accelerator (xPU), and zNAND-O — NAND flash for on-device AI. Claimed up to 8x performance vs HBM5 and up to 10x density with wafer bonding. These are mockups, no timelines.

🌍 Memory above the accelerator shortens the data path between memory and chip — a hit to AI system bottlenecks: bandwidth, energy, and heat. Samsung enters the HBF-like NAND race for edge AI with SK hynix and Sandisk.

👤 If zHBM reaches mass production, AI systems will become faster and cooler. Watch three tracks: zHBM and zNAND-O, HBM4E and HBM5 release, V10 BV-NAND with 400+ layers.

Source 1: https://news.samsung.com/global/samsung-unveils-next-gen-3d-memory-vision-at-fms-2026-charting-the-future-of-ai-infrastructure Source 2: https://news.samsungsemiconductor.com/global/inside-fms-2026-samsung-electronics-showcases-the-future-of-ai-memory/

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